Speaker: M.Sc. Rodrigo de Vasconcellos Lourenço (TU Braunschweig)
February 15th, 2024
15:00 - 16:00
AEI Seminar room 103 (Callinstr.38, 30167 Hannover)

Title
Control of point defect density in GaInN/GaN quantum wells: The underlayer as a diffusion barrier, regardless of its composition.

Abstract
Welcome to explore one important mechanism that affects the point defect density in the active region of light-emitters. This talk is aimed at presenting evidences for point defect diffusion, and hence how to control the defect density in GaInN/GaN quantum wells by using proper growth conditions. Thus, it offers a new perspective on the reduction of defects, allowing further development and design of more efficient light-emitting nanostructures.