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--- start:pro:current:20240215 [2024/01/26 14:01] – fumiko.kawazoe@aei.mpg.de
+++ start:pro:current:20240215 [2024/02/05 14:31] (aktuell) – fumiko.kawazoe@aei.mpg.de
@@ Zeile 5: / Zeile 5: @@
 **AEI Seminar room 103 (Callinstr.38, 30167 Hannover)**\\
-=== Title and Abstract ===
 **Title** \\
 Control of point defect density in GaInN/GaN quantum wells: The underlayer as a diffusion barrier, regardless of its composition.\\
 **Abstract** \\
-Welcome to explore one important mechanism that affects the point defect density in the active region of light-emitters. This talk is aimed at presenting evideces for point defect diffusion, and hence how to control the defect density in GaInN/GaN quantum wells by using proper growth conditions. Thus, it offers a new perspective on the reduction of defects, allowing further development and design of more efficient light-emitting nanostructures.  \\
+Welcome to explore one important mechanism that affects the point defect density in the active region of light-emitters. This talk is aimed at presenting evidences for point defect diffusion, and hence how to control the defect density in GaInN/GaN quantum wells by using proper growth conditions. Thus, it offers a new perspective on the reduction of defects, allowing further development and design of more efficient light-emitting nanostructures.  \\